Selectively Formed Metal Organic Chemical Vapor Deposition TiSiN and Ta Barrier Metal Using Direct Contact Via Process for Sub-65 nm Interconnects

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We report integration of metal organic chemical vapor deposition (MOCVD) TiSiN barrier metal into 65 nm low-$k$ dielectric ($k=2.9$) interconnects. Selective TiSiN barrier was formed along via trench wall using direct contact via (DCV) process and subsequent Ta incorporation into Cu was found to significantly improve electromigration (EM) reliability. Also, a large reduction of 0.1 μm via/line resistances is achieved. The proposed integration method allows MOCVD TiSiN usable as a barrier metal for the nano scale interconnects, taking advantages of high throughput and excellent step coverage of MOCVD process compared to other barrier processes.
2007-04-30