Selected-Area Growth of SnO2 Nanowires on TiO2 Layer through Reduction of Hydrogen Gas
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概要
- 論文の詳細を見る
SnO2 nanowires were grown on a TiO2/ATO (antimony doped tin dioxide) glass substrate by thermal evaporation at ${\sim}750$ °C without any source material (tin oxide powder or metal tin). A SnO2 layer was melted and evaporated from ATO glass substrate. Hydrogen served as a reductant, causing vapor species of SnO and O2 to be formed from the SnO2 layer. The patterned TiO2 layer provided sites with a high surface energy such that the selected-area growth of SnO2 nanowires was achieved. A growth model, based on a vapor–liquid–solid mechanism, for interpreting the growth of the nanowires in our work is proposed. Field emission scanning electron microscopy (FESEM), high-resolution transmission emission microscopy (HRTEM), and cathodoluminescence (CL) were used to characterize the nanowires.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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Shih Han
Department Of Material Science And Engineering National Tsing-hua University
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Wu Jyh-ming
Department Of Chemical And Materials Engineering Chinese Culture University
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Tseng Yung-Kuan
Department of Cultural Heritage Conservation, National Yunlin University of Science and Technology, 123, Section 3, University Rd., Touliu, Yunlin 64002, Taiwan
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Shih Han
Department of Material Science and Engineering, National Tsing-Hua University, 101, Section 2, Kuang Fu Rd., Hsinchu 300, Taiwan
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