Electrode Structure of Ferroelectric Electron Emitter

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概要

• 論文の詳細を見る

• A novel electron emitter utilizing the characteristics of ferroelectric ceramic materials has been developed. The electron-emitting portion of the electron emitter has a unique microstructure that has a vacuum gap between the upper electrode and the surface of the ferroelectric layer. We confirmed electron emission by a three-step process that consists of (the first step) electron charge, (the second step) charge retention, and (the third step) electron emission. The asymmetric property of ferroelectric hysteresis in the process indicates the following results. In the first step, an electron charge is performed in synchrony with the polarization reversal of the ferroelectric layer. On the other hand, in the third step, the electric field in the vacuum gap advances the electron emission while the polarization reversal is performed in the ferroelectric layer.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-15

著者

• Sugiyama Tomohiko

  Ngk Insulators Ltd.

• Sugiyama Tomohiko

  NGK Insulators, Ltd., Corporate R&D, Materials Research Laboratory, Nagoya 467-8530, Japan

• Ohwada Iwao

  NGK Insulators, Ltd., Corporate R&D, Materials Research Laboratory, Nagoya 467-8530, Japan

• Nanataki Tsutomu

  NGK Insulators, Ltd., Corporate R&D, Materials Research Laboratory, Nagoya 467-8530, Japan

• Ohwada Iwao

  NGK Insulators, Ltd., Corporate R&D, Materials Research Laboratory, Nagoya 467-8530, Japan

• Nanataki Tsutomu

  NGK Insulators, Ltd., Corporate R&D, Materials Research Laboratory, Nagoya 467-8530, Japan

関連論文

• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Electrode Structure of Ferroelectric Electron Emitter

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