Radio Frequency Power Dependence in Formation of SiO:CH Thin Films by Plasma-Enhanced Chemical Vapor Deposition

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概要

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• SiO:CH films were prepared by capacitively coupled radio frequency (RF) plasma-enhanced chemical vapor deposition to investigate the dependence on RF power on the basis of plasma reactions and film properties. The RF power dependence can be divided into two broad categories, the reaction-controlled regime (regime R) and the flow rate-controlled regime (regime F). In the regime R, the introduced RF power initially dissociates and recombines the trimethylmethoxysilane reactant, and leads to drastic increase in deposition rate. In the regime F, the insufficient flow of reactants saturates the deposition rate. Moreover, the extra energy dissociates and recombines the reactant drastically and heats electrons in the plasma.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-11-15

著者

• Takai Osamu

  Ecotopia Science Institute Nagoya University

• Inoue Yasushi

  Ecotopia Science Institute Nagoya University

• Saito Nagahiro

  Graduate School Of Engineering Nagoya University

• Saito Nagahiro

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Yoshida Takanori

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Shimazu Norifumi

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Yun Yongsup

  EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Nanba Naoki

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Inoue Yasushi

  EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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