Retention Reliability Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with N2O Oxidation Tunnel Oxide
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概要
- 論文の詳細を見る
The reliability characteristics of silicon–oxide–nitride–oxide–silicon (SONOS) devices with different thin tunnel oxides are studied. The device with the tunnel oxynitride grown in pure N2O ambient at a high temperature has better performance, including better leakage current, programming speed, read-disturb, and retention characteristics, than that with a tunnel oxide layer grown by dry oxidation with N2 annealing treatment. Moreover, the properties of two-bit operation are also displayed by a reverse read method. Furthermore, the surface roughness and interface states between a tunnel oxide layer and a Si substrate are also observed by atomic force microscopy (AFM) and charge-pumping method to evaluate interfacial nitrogen incorporation. The results show that data retention reliability attained a significant improvement while maintaining good programming/erase performance and two-bit operation. This work can provide a straightforward way of reliability improvement for future flash memory application.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
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Wu Jia-Lin
School of Defense Science, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.
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Chien Hua-Ching
Semiconductor Laboratory, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.
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Kao Chin-Hsing
School of Defense Science, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.
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Tsai Tzung-Kuen
Semiconductor Laboratory, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.
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Liao Chien-Wei
Semiconductor Laboratory, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.
関連論文
- Deposition-Temperature Effect on Nitride Trapping Layer of Silicon–Oxide–Nitride–Oxide–Silicon Memory
- Retention Reliability Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with N2O Oxidation Tunnel Oxide