Silicon Delta-Doping Effect on Photoluminescence from InGaN/GaN Multi-Quantum-Well Structures

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概要

• 論文の詳細を見る

• A Si delta-doped GaN layer was included in the vicinity of five-period InGaN/GaN multi-quantum-well structures of blue-light-emitting diodes grown on sapphire substrates by metalorganic chemical vapor deposition. An additional photoluminescence peak at 449.6 nm at room temperature was observed in comparison with the case for the sample without the delta-doped layer. The radiative transition results from the energy state of the delta-doped potential below the conduction band edge. Furthermore, the delta-doped sample shows an anomalous current tunneling with a peak current of 38 mA at 5.02 V, which can be correlated with the negative acceptor-like traps of dislocation channels.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-01-15

著者

• Jeon Kyoung

  Division Of R&d Auk Corporation

• Kim Keunjoo

  Department of Mechanical Engineering and Research Center for Industrial Technology, Chonbuk National University, Jeonju 561-756, Republic of Korea

• Kim Keunjoo

  Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University, Jeonju 561-756, R. O. Korea

• Jeon Kyoung

  Division of R&D, AUK Corporation, Iksan 570-300, R. O. Korea

関連論文

• Enhanced Light Extraction from Nanoporous Surfaces of InGaN/GaN-Based Light Emitting Diodes
• Enhanced Fabry–Perot Interferences from Nanoporous Surfaces of GaN Thin Films Patterned by Anodic Alumina Templates
• Silicon Delta-Doping Effect on Photoluminescence from InGaN/GaN Multi-Quantum-Well Structures

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