Thin Film Transistors with High Mobility and High Threshold Voltage Stability Made Using Hot Wire Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• Although thin film transistors (TFT) are routinely made for commercial applications by plasma deposition, there is a need for TFTs with higher electron mobility as well as excellent stability. In this paper it is shown that hot-wire chemical vapor deposition (CVD) (Cat-CVD) can address those needs, while at the same time offering higher deposition rates and better source gas utilization. Thin film transistors with the active layer deposited either from pure SiH4 or from H2-diluted silane show remarkable stability. The field-effect mobility in an inverted staggered configuration for amorphous channel material is 1.5 cm2 V-1 s-1 and in the coplanar, top gate configuration it is 1.3 cm2 V-1 s-1. For μc-Si:H material in the top gate configuration, the as-deposited, unannealed mobility was ${\sim}5$ cm2 V-1 s-1, but recently also higher mobilities have been reported. Hot wire deposited channel layers are compatible with plasma-deposited SiNx layers, but also hot wire CVD SiNx with high density and compactness has been demonstrated. Thus it is feasible to produce all-hot-wire CVD TFTs directly on glass or polyimid.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-05-30

著者

• Schropp Ruud

  Utrecht University Debye Institute Dept. Of Atomic And Interface Physics

• Schropp Ruud

  Utrecht University, Faculty of Science, Debye Institute, SID—Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands

関連論文

• Silicon Nitride as Dielectric Medium Deposited at Ultra High Deposition Rate (${>}7$ nm/s) using Hot-Wire Chemical Vapor Deposition
• Purely Intrinsic Poly-silicon Films for n-i-p Solar Cells
• Thin Film Transistors with High Mobility and High Threshold Voltage Stability Made Using Hot Wire Chemical Vapor Deposition

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