Purely Intrinsic Poly-silicon Films for n-i-p Solar Cells

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概要

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• Polycrystalline silicon films have been prepared by hot wire chemical vapor deposition (HWCVD) at a relatively low substrate temperature of 430℃ at a high growth rate (> 5Å/s) by optimizing the hydrogen dilution of the silane feedstock gas, the gas pressure and the wire temperature. The optimized material has 95% crystalline volume fraction with complete coalescence of grains. The grains with an average size of 70 nm have a preferential orientation along the (220) direction. Large structures up to 0.5 μm could be observed by atomic force microscopy (AFM). An activation energy of 0.54eV for the electrical transport and a low carrier concentration (< 10^<17>cm^<-3>) confirmed the intrinsic nature of the films. A white light photoconductivity of 1.9×10^<-5>Ω^<-1>cm^<-1>, a high minority carrier diffusion length of 334 nm and a low (< 10^<17>cm^<-3>) defect density ensure that the poly-Si:H films possess device quality. A very small temperature dependence of the Hall mobility (0.012eV) indicates negligible barrier to carrier transport at the grain boundaries. A single junction n-i-p cell incorporating HWCVD poly-Si:H in the configuration n^+-c-Si/i-poly-Si:H/p-μc-Si:H/ITO yielded 3.15% efficiency under 100 mW/cm^2 AM1.5 illumination and a current density of 18.2 mA/cm^2 was achieved for only 1.5 μm thick i-layer.

• 1997-09-15

著者

• Schropp Ruud

  Utrecht University Debye Institute Dept. Of Atomic And Interface Physics

• Rath Jatindra

  Utrecht University Debye Institute Dept. Of Atomic And Interface Physics

• MEILING Hans

  Utrecht University, Debye Institute, Dept. of Atomic and Interface Physics

• Meiling Hans

  Utrecht University Debye Institute Dept. Of Atomic And Interface Physics

関連論文

• Silicon Nitride as Dielectric Medium Deposited at Ultra High Deposition Rate (${>}7$ nm/s) using Hot-Wire Chemical Vapor Deposition
• Purely Intrinsic Poly-silicon Films for n-i-p Solar Cells
• Thin Film Transistors with High Mobility and High Threshold Voltage Stability Made Using Hot Wire Chemical Vapor Deposition

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