Silicon Nitride as Dielectric Medium Deposited at Ultra High Deposition Rate (${>}7$ nm/s) using Hot-Wire Chemical Vapor Deposition

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概要

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• The deposition process of silicon nitride (SiNx) by hot-wire chemical vapor deposition (HWCVD) is investigated by exploring the effects of process pressure and gas-flow ratio on the composition of the SiNx films. It appeared that the N/Si ratio in the layers determines the structural properties of the deposited films. The volume concentration of Si-atoms in the deposited films appeared to be independent of N/Si ratio. Because in a silane/ammonia mixture the decomposition rate of ammonia is smaller than that of silane, the properties of the SiNx layers are largely determined by the ability to incorporate nitrogen into the growing material. An increase in the process pressure greatly enhances the efficiency of the ammonia decomposition, which is ascribed to the higher partial pressure of atomic hydrogen originating from the decomposition of silane molecules. With this knowledge we were able to increase the deposition rate of high-density SiNx films to a very high value of 7 nm/s, much faster than any commercial plasma deposition technique can offer. Despite this high deposition rate, the SiNx layers still posses a high mass density of 2.6 g/cm3 and good thermal stability. Current–voltage ($I$–$V$) and capacitance–voltage ($C$–$V$) measurements show that silicon nitride deposited at high deposition rate has good potential for application as the dielectric layer in various applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-03-30

著者

• van der

  utrecht大学病理

• Goldbach Hanno

  Utrecht University Faculty Of Science Department Of Physics And Astronomy Sid-physics Of Devices

• Verlaan Vasco

  Utrecht University, Faculty of Science, Department of Physics and Astronomy, SID—Physics of Devices,

• Houweling Silvester

  Utrecht University, Faculty of Science, Department of Physics and Astronomy, SID—Physics of Devices,

• Schropp Ruud

  Utrecht University, Faculty of Science, Department of Physics and Astronomy, SID—Physics of Devices,

• Schropp Ruud

  Utrecht University Debye Institute Dept. Of Atomic And Interface Physics

• Schropp Ruud

  Utrecht University Faculty Of Science Department Of Physics And Astronomy Sid-physics Of Devices

• Verlaan Vasco

  Utrecht University Faculty Of Science Department Of Physics And Astronomy Sid-physics Of Devices

• Houweling Silvester

  Utrecht University Faculty Of Science Department Of Physics And Astronomy Sid-physics Of Devices

• Van Der

  Utrecht University Faculty Of Science Department Of Physics And Astronomy Sid-physics Of Devices

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