Electron Injection Layers Consisting of Naphthalene Tetracarboxylic Dianhydride and Indium in n-Type Organic Field-Effect Transistors
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概要
- 論文の詳細を見る
The performance of n-type field-effect transistors (FETs) using naphthalene tetracarboxylic dianhydride (NTCDA) was improved by inserting an electron injection layer consisting of indium-doped NTCDA at the source electrode interface. This film had very high conductivity due to electronic interactions between carbonyl oxygens and indium. The insertion of the indium-doped NTCDA film increased field-effect mobility and reduced threshold gate voltage. Injection enhancement was confirmed separately using a sandwich-type layered cell having the same interface as that of the FET device. The role of the injection layer is discussed in terms of contact resistance in n-type organic FETs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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YOKOYAMA Masaaki
Department of Agricultural Chemistry, Faculty of Agriculture, Kyushu University
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Umehara Masaaki
Department Mathematics Graduate School Of Science Hiroshima University
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Umehara Masaaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Nakayama Ken-ichi
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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