Design and Fabrication of Charge-Injection-Controlled Organic Transistors

概要

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A novel device structure called a “mesa-type” was designed and fabricated for a charge-injection-controlled organic transistor (CICT), which is a three-terminal vertical transistor having its third striped metal base electrode in the organic semiconductor film. Using lithography, a mesa structure of insulating SiN was provided beneath the stripe base electrode to diminish current leakage between the base and the bottom collector electrodes. The SiN insulating layer efficiently suppressed current leakage, and clear modulation of the collector current was observed. The choice of Pt for the base electrode metal enables an amplification factor ($h_{\text{FE}}$) as high as 700 to be achieved as expected from its driving mechanism. The lithography also enabled us to examine the electrode stripe pitch dependence, which revealed that a finer pitch stripe allows larger current modulation.
2006-01-15