Electronic Structures of Quantum Well of A1-xBx Alloy Semiconductor in Coherent Potential Approximation

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概要

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• The electronic structures of a quantum well constructed from the binary alloy semiconductor A1-xBx are studied by coherent potential approximation (CPA). A tight binding model is used for a single particle (electron, hole, or Frenkel exciton) in a well composed of a rectangular array of $N_{x}\times N_{y}\times N_{z}$ sites. The effects of diagonal randomness are included as the coherent potential $\Sigma(E)$, which is assumed to be the same for all sites, and is self-consistently determined with the average Green's function. For slab $(\infty,\infty,N_{z})$ and wire $(\infty,N_{y},N_{z})$ structures, the energy density of states $\rho(E)$ is composed of $N_{z}$ (or $N_{y}\times N_{z}$) subbands with the remains of a two (one)-dimensional van-Hove singularity. When $x$ (or $1-x$) is small, a B (A) impurity band always appears on the lower (higher) energy side of the lowest (highest) host subband. The metamorphosis of $\rho(E)$ and the absorption spectrum $I(E)$ due to the creation of a Frenkel exciton by changing the well size and the dimensionality is extensively discussed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-11-15

著者

• Shinozuka Yuzo

  Department Of Applied Science Faculty Of Engineering Yamaguchi University

• Shinozuka Yuzo

  Department of Material Science and Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan

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• Electronic Structures of Quantum Well of A1-xBx Alloy Semiconductor in Coherent Potential Approximation

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