Electron-Lattice Interaction in Nonmetallic Materials : Configuration Coordinate Diagram and Lattice Relaxation

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概要

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• Electron-lattice interactions in nonmetallic materials are reexamined in the many-electron scheme. The difference in the stable atomic configuration between two electronic states is the origin of the electron-lattice interaction. We show the relationship among the adiabatic potentials, one electron (hole) energy and the lattice elastic energy, paying attention to the electron-hole symmetry. Correct configuration coordinate diagrams for deep-level defects in semiconductors are presented which can be used even when the number of carriers changes due to creation and recombination. Radiative and nonradiative carrier capture and recombination processes at deep-level defects are described consistently with particular attention to the charge of a defect, the thermal and the optical depths of a bound carrier, the correlation between successive electron and hole captures, and the energy dissipation to the lattice through the interaction mode.

• 社団法人応用物理学会の論文
• 1993-10-15

著者

• Shinozuka Yuzo

  Department Of Applied Science Faculty Of Engineering Yamaguchi University

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