New Strained Silicon-on-Insulator Fabricated by Laser-Annealing Technology

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概要

• 論文の詳細を見る

• A new low temperature process that can be used to fabricate a strained silicon-on insulator (SOI) using an excimer-laser-irradiated relaxation technique is proposed. An excimer laser is used to relax the stress of a SiGe layer on a SOI substrate. The results of Raman spectra show that changing the laser power density on the SiGe layer controls the stress of a Si layer on the SiGe layer. We confirm that increasing the laser power density enhances the electron mobility of strained Si on a relaxed SiGe/SOI structures. This electron mobility increases to 630 cm2/Vs, which is an increase of approximately 180%, compared with that of the unstrained Si on a strained SiGe/SOI structure.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Mimura Atsushi

  Silicon Technology Lab. Fujitsu Laboratories Ltd.

• Mishima Yasuyoshi

  Silicon Technology Laboratory, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

• Mishima Yasuyoshi

  Silicon Device Laboratories, Device and Material Laboratories, Fujitsu Laboratories, Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Ochimizu Hirohisa

  Silicon Technology Laboratory, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

• Mimura Atsushi

  Silicon Technology Laboratory, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

関連論文

• New Strained SOI Fabricated By Laser Annealing Technology
• New Strained Silicon-on-Insulator Fabricated by Laser-Annealing Technology
• Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement

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