New Strained SOI Fabricated By Laser Annealing Technology
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
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Mishima Yasuyoshi
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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OCHIMIZU Hirosato
Silicon Technology Lab., Fujitsu Laboratories Ltd.
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MIMURA Atsushi
Silicon Technology Lab., Fujitsu Laboratories Ltd.
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Mimura Atsushi
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Ochimizu Hirosato
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Mishima Yasuyoshi
Silicon Device Laboratories, Device and Material Laboratories, Fujitsu Laboratories, Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
関連論文
- New Strained SOI Fabricated By Laser Annealing Technology
- New Strained Silicon-on-Insulator Fabricated by Laser-Annealing Technology
- Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement