Electromigration-Induced Void Growth Kinetics in SiNx-Passivated Single-Damascene Cu Lines

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概要

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• Basic electromigration characteristics of SiNx-passivated single-damascene Cu lines have been investigated. The results indicate that an effective incubation time for void growth contributes to resistance change. This effective incubation time depended inversely on the square of current density. The activation energy of the effective incubation time was $1.14 \pm 0.27$ eV. The observed critical product of electromigration was approximately 5900 A/cm. The activation energy of diffusion was $0.89 \pm 0.07$ eV. These results indicate that the Cu/SiNx interface diffusion activation energy and the effective charge number are similar to those of unpassivated Cu surface diffusion. However, the SiNx-passivated interface of the sample showed significantly reduced drift velocity compared to those of the unpassivated sample.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-09-15

著者

• Yokogawa Shinji

  Test Analysis Technology Development Division Nec Electronics Corporation

• Yokogawa Shinji

  Test Analysis Technology Development Division, NEC Electronics Corporation, 1753 Shimonumabe, Nakahara-ku, Kawasaki, Kanagawa 211-8668, Japan

関連論文

• Electromigration-Induced Void Growth Kinetics in SiNx-Passivated Single-Damascene Cu Lines
• Scaling Impacts on Electromigration in Narrow Single-Damascene Cu Interconnects

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