Nonlithographic SiO2 Nanodot Arrays via Template Synthesis Approach

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概要

• 論文の詳細を見る

• We present a method for fabricating SiO2 nanodot arrays through pattern transfer of self-organized tantalum oxide hard masks on to a Si wafer. Tantalum oxide nanopillar arrays are formed at the bottom of anodic aluminum oxide by electrochemical anodization of the Al/Ta films on a Si wafer. Then the tantalum oxide nanopillars were used as hard masks for formation of SiO2 nanostructures. Ion milling was used for the pattern transfer. The density and diameter of the SiO2 nanodot arrays could be controlled by varing the anodizing conditions. The average diameters and areal density of prepared SiO2 nanodisks were 68 nm and 1010/cm2, respectively. Through this approach, it is expected that a wide variety of nanodisk arrays over large areas can be prepared.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-08-15

著者

• Yoo In

  U-team Samsung Advanced Institute Of Technology (sait)

• CHA Young

  U-team, Samsung Advanced Institute of Technology (SAIT)

• Seo David

  U-team Samsung Advanced Institute Of Technology (sait)

• Park Sangjin

  U-team Samsung Advanced Institute Of Technology (sait)

• Jeong Soo-hwan

  U-team Samsung Advanced Institute Of Technology (sait)

• Chung Chee

  Department Of Chemical Engineering And Institute Of Clean Technology Inha University

• Park Sangjin

  U-team, Samsung Advanced Institute of Technology (SAIT), P. O. Box 111, Suwon 440-600, Korea

• Cha Young

  U-team, Samsung Advanced Institute of Technology (SAIT), P. O. Box 111, Suwon 440-600, Korea

• Seo David

  U-team, Samsung Advanced Institute of Technology (SAIT), P. O. Box 111, Suwon 440-600, Korea

• Jeong Soo-Hwan

  U-team, Samsung Advanced Institute of Technology (SAIT), P. O. Box 111, Suwon 440-600, Korea

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