Control of Carrier Concentration in n-Type Hot-Pressed Bi1.8Sb0.2Te3 Alloys
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概要
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We introduce an annealing method performed with only Bi powders at 673 K. With this method, the carrier concentration is controlled and the conductivity type can be changed by adjusting the annealing time. Most importantly, conductivity-type transition occurs in an annealing time of 48 hours. The thermoelectric properties of the alloys are measured and described as functions of carrier concentration and annealing time. n-Type hot-pressed Bi1.8Sb0.2Te3 alloys that deviated from the optimal figure-of-merit $\mathbf{Z}$ condition owing to high carrier concentration can be optimized by this annealing method.
- 2004-06-15
著者
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Mitani Tadaoki
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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IWASAKI Hideo
The School of Materials Science, Japan Advanced Institute of Science and Technology
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Ahn Jeung-sun
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Je Koo-chul
The School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Im Hee-joong
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Sano Seijirou
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Kim Dong-hwan
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Ahn Jeung-Sun
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Sano Seijirou
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Iwasaki Hideo
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Je Koo-Chul
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Im Hee-Joong
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Mitani Tadaoki
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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