Improved Resonance Characteristics by Thermal Annealing of W/SiO2 Multi-Layers in Film Bulk Acoustic Wave Resonator Devices

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, we, for the first time, present the effects of the thermal annealing of the W/SiO2 multi-layer Bragg reflectors on the resonance characteristics of the ZnO-based film bulk acoustic wave resonator (FBAR) devices. In order to improve the resonance characteristics of the FBAR devices, we employed a thermal annealing process after the Bragg reflectors were formed on a silicon substrate using a radio frequency (RF) magnetron sputtering technique. As a result, the resonance characteristics of the FBAR devices were observed to strongly depend on the annealing conditions applied to the Bragg reflectors. The FBAR devices with the Bragg reflectors annealed at 400°C/30 min showed excellent resonance characteristics as compared to those with the non-annealed (as-deposited) Bragg reflectors. The newly proposed simple thermal annealing process will be very useful to more effectively improve the resonance characteristics of the future FBAR devices with multi-layer Bragg reflectors.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• PARK Jin-Seok

  Hanyang University

• Yoon Giwan

  School Of Eng. Information & Communications University (icu)

• Yim Munhyuk

  School Of Engineering Information And Communications University (icu)

• Chai Dongkyu

  School Of Engineering Information And Communications University (icu)

• Kim Dong-hyun

  School Of Electrical Engineering Korea University

• Park Jin-Seok

  Hanyang University, 1271, Sa-1 dong, Sangrok-gu, Ansan, Kyunggido, Korea

• Chai Dongkyu

  School of Engineering, Information and Communications University (ICU), 103-6, Munji-dong, Yusong-gu, Daejon 305-714, Korea

• Kim Dong-Hyun

  School of Engineering, Information and Communications University (ICU), 103-6, Munji-dong, Yusong-gu, Daejon 305-714, Korea

• Yoon Giwan

  School of Engineering, Information and Communications University (ICU), 103-6, Munji-dong, Yusong-gu, Daejon 305-714, Korea

関連論文

• A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology(Session 8B : High Speed and High Frequency Applications 2)
• A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology(Session 8B : High Speed and High Frequency Applications 2)
• Improved Resonance Characteristics by Thermal Annealing of W/SiO_2 Multi-Layers in Film Bulk Acoustic Wave Resonator Devices
• Multidisciplinary Aeroelastic Computation of Composite Curved Wings
• On the Construction of High-Rate Quasi-Orthogonal STBC for MIMO QR Demodulation(Communications and Wireless Systems, Recent Advances in Circuits and Systems-Part 1)
• MOS Characteristics of NH_3-Nitrided N_2O-Annealed Oxides Fabricated at Reduced Pressure
• Improved Resonance Characteristics by Thermal Annealing of W/SiO2 Multi-Layers in Film Bulk Acoustic Wave Resonator Devices

スポンサーリンク