MOS Characteristics of NH_3-Nitrided N_2O-Annealed Oxides Fabricated at Reduced Pressure
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Yoon Giwan
School Of Eng. Information & Communications University (icu)
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Yoon Giwan
School Of Engineering Information & Communications University (icu)
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Epstein Yefim
Intel Massachusetts
関連論文
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- Metal-Oxide-Semiconductor Characteristics of NH_3-Nitrided N_2O-Annealed Oxides Fabricated at Reduced Pressure
- MOS Characteristics of NH_3-Nitrided N_2O-Annealed Oxides Fabricated at Reduced Pressure
- Improved Resonance Characteristics by Thermal Annealing of W/SiO2 Multi-Layers in Film Bulk Acoustic Wave Resonator Devices