Metal-Oxide-Semiconductor Characteristics of NH_3-Nitrided N_2O-Annealed Oxides Fabricated at Reduced Pressure

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概要

• 論文の詳細を見る

• In this paper, a new technique, namely, the fabrication of NH_3-nitrided N_2O-annealed oxides(NNO)under reduced pressure, is presented to attain the desired nitrogen concentrations and profiles that eventually improve the hot-carrier lifetime and high immunity to boron penetration. The proposed NNO dielectrics fabricated at reduced pressure(<550 Torr)showed excellent hot-carrier lifetimes and barrier properties to boron penetration without any adverse effects on the electrical properties and reliability.

• 社団法人応用物理学会の論文
• 2000-04-30

著者

• Yoon Giwan

  Information & Communications University(icu)

• Epstein Yefim

  Intel Massachusetts

• Yoon Giwan

  Information & Communications University (icu)

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