Improved Resonance Characteristics by Thermal Annealing of W/SiO_2 Multi-Layers in Film Bulk Acoustic Wave Resonator Devices
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
-
Kim Dong-Hyun
School of Electrical Engineering, Korea University
-
Yim M
School Of Engineering Information And Communications University (icu)
-
YIM Munhyuk
School of Engineering, Information and Communications University (ICU)
-
CHAI Dongkyu
School of Engineering, Information and Communications University (ICU)
-
PARK Jin-Seok
Hanyang University
-
YOON Giwan
School of Engineering, Information and Communications University (ICU)
関連論文
- A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology(Session 8B : High Speed and High Frequency Applications 2)
- A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology(Session 8B : High Speed and High Frequency Applications 2)
- Improved Resonance Characteristics by Thermal Annealing of W/SiO_2 Multi-Layers in Film Bulk Acoustic Wave Resonator Devices
- Multidisciplinary Aeroelastic Computation of Composite Curved Wings
- On the Construction of High-Rate Quasi-Orthogonal STBC for MIMO QR Demodulation(Communications and Wireless Systems, Recent Advances in Circuits and Systems-Part 1)
- Improved Resonance Characteristics by Thermal Annealing of W/SiO2 Multi-Layers in Film Bulk Acoustic Wave Resonator Devices