High-$Q$ Spiral Inductor Design on Silicon Substrate

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概要

• 論文の詳細を見る

• This paper presents the realization of a phenomenal $Q$-value increment as high as 122% for 4 nH spiral inductors on a silicon substrate. The loss mechanisms of parasitic effects on the $Q$-factor have been studied to improve $Q$ design. The dramatic improvement in the $Q$ value resulted from optimizing the doping level and film thickness of a poly shield layer combined with proton implantation. The shielding effect of poly-silicon and the semi-insulating characteristics of a proton-bombarded substrate have added 37% and 58% increments to the $Q$ value of the inductors, respectively. The combination of the two methods has multiplied their individual contributions rather than just adding them. The technique proposed in this work shall become a critical measure for putting inductors on silicon substrates with superior performance for silicon-based radio frequency integrated circuit (RFIC) applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-12-15

著者

• Kao Chin-hsing

  Department Of Applied Physics Chung-cheng Institute Of Technology National Defense University

• Chen Tung-sheng

  Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University

• Lee Chih-Yuan

  Department of Applied Physics, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.

• Deng Joseph

  School of Defense Science, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.

• Chen Tung-Sheng

  Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.

関連論文

• Deposition-Temperature Effect on Nitride Trapping Layer of Silicon–Oxide–Nitride–Oxide–Silicon Memory
• High-$Q$ Spiral Inductor Design on Silicon Substrate
• Endurance and Data Retention Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Semiconductor Memory Devices with Partially Bottom-Silicon-Rich Nitride Structure

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