Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor

スポンサーリンク

概要

• 論文の詳細を見る

• We fabricated pentacene thin film-transistors on a glass substrate with a SiO2 layer via thermal evaporation in ultrahigh vacuum. We investigated the influence of channel length, channel width, and the deposition rate of a pentacene layer on organic thin film transistors (OTFTs) performance. Field-effect mobility of the transistors markedly increased as channel width decreased and channel length increased. The maximum drain current of OTFTs increased as channel length decreased. These observations indicate that the grain boundary scattering of charge carriers in the pentacene layer is a major hurdle in charge conduction, similarly to the observation in poly-Si TFTs. The maximum field-effect mobility was 0.69 cm2/Vs for a device prepared at 0.1 Å/s with a 50 μm channel length and a 20 μm channel width. Channel width/length ratio ($W/L$) as well as the deposition rate of the pentacene layer should be carefully chosen to increase field-effect mobility and maximum drain current in OTFTs.

• 2004-11-15

著者

• Whang Chung

  Institute Of Physics And Applied Physics Yonsei University

• Kim Sang

  Samsung Advanced Institute Of Technology

• Koo Bon

  Samsung Advanced Institute Of Technology

• PARK Dae

  Institute of Physics and Applied Physics, Yonsei University

• KANG In

  Samsung Advanced Institute of Technology

• Noh Myungkeun

  Institute Of Physics And Applied Physics And Atomic-scale Surface Science Research Center Yonsei Uni

• Kim Hui

  Institute Of Physics And Applied Physics Yonsei University

• Kang Seong

  Institute Of Physics And Applied Physics Yonsei University

• Whang Chung

  Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea

• Noh Myungkeun

  Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea

• Kang Seong

  Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea

• Kang In

  Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, Korea

• Koo Bon

  Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, Korea

• Park Dae

  Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea

関連論文

• Geometric Effect of Channel on Device Performance in Pentacene Tin-Film Transistor
• Characterization of Surface Chemical States of a Thick Insulator : Chemical State Imaging on MgO Surface
• The Instability of Nitrogen Bonds in Oxygen Incorporated InN_O_x Films
• The Real-Time Haptic Simulation of a Biomedical Volumetric Object with Shape-Retaining Chain Linked Model(Human-computer Interaction)
• The Instability of Nitrogen Bonds in Oxygen Incorporated InN1-xOx Films
• Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor
• Characterization of Surface Chemical States of a Thick Insulator: Chemical State Imaging on MgO Surface

スポンサーリンク