KANG In | Samsung Advanced Institute of Technology
スポンサーリンク
概要
関連著者
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Whang Chung
Institute Of Physics And Applied Physics Yonsei University
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Kim Sang
Samsung Advanced Institute Of Technology
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Koo Bon
Samsung Advanced Institute Of Technology
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PARK Dae
Institute of Physics and Applied Physics, Yonsei University
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KANG In
Samsung Advanced Institute of Technology
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Kim Hui
Institute Of Physics And Applied Physics Yonsei University
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KANG Seong
Institute of Physics and Applied Physics, Yonsei University
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NOH Myungkeun
Institute of Physics and Applied Physics, Yonsei University
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KIM Hui
Institute of Physics and Applied Physics, Yonsei University
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Noh Myungkeun
Institute Of Physics And Applied Physics And Atomic-scale Surface Science Research Center Yonsei Uni
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Noh Myungkeun
Institute Of Physics And Applied Physics Yonsei University
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Kang Seong
Institute Of Physics And Applied Physics Yonsei University
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Whang Chung
Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea
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Noh Myungkeun
Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea
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Kang Seong
Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea
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Kang In
Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, Korea
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Koo Bon
Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, Korea
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Park Dae
Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea
著作論文
- Geometric Effect of Channel on Device Performance in Pentacene Tin-Film Transistor
- Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor