Geometric Effect of Channel on Device Performance in Pentacene Tin-Film Transistor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-15
著者
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Whang Chung
Institute Of Physics And Applied Physics Yonsei University
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Kim Sang
Samsung Advanced Institute Of Technology
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Koo Bon
Samsung Advanced Institute Of Technology
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KANG Seong
Institute of Physics and Applied Physics, Yonsei University
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NOH Myungkeun
Institute of Physics and Applied Physics, Yonsei University
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PARK Dae
Institute of Physics and Applied Physics, Yonsei University
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KIM Hui
Institute of Physics and Applied Physics, Yonsei University
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KANG In
Samsung Advanced Institute of Technology
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Noh Myungkeun
Institute Of Physics And Applied Physics Yonsei University
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Kim Hui
Institute Of Physics And Applied Physics Yonsei University
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- Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor