Negative Differential Resistance in Ferroelectric Lead Zirconate Titanate Thin Films: Influence of Interband Tunneling on Leakage Current
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概要
- 論文の詳細を見る
The leakage current in ferroelectric thin films is one of the most pertinent issues for their application in microelectronics. We argue that the leakage current in ferroelectric films at low electric field can arise from interband tunneling as opposed to Fowler–Nordheim tunneling at high electric field. We substantiate our argument by showing the evolution of negative differential resistance (NDR) with decreasing film thickness in the I–V curves of lead zirconate titanate (PZT) films prepared under controlled conditions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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Lee Joseph
Department Of Electrical Engineering And Institute Of Electronics National Tsing-hua University
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MAITY Asit
Department of Electrical Engineering and Institute of Electronics, National Tsing-Hua University
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SEN Amarnath
Electroceramics Division, Central Glass and Ceramic Research Institute
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Maiti Himadri
Electroceramics Division, Central Glass and Ceramic Research Institute, Kolkata-700032, India
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Sen Amarnath
Electroceramics Division, Central Glass and Ceramic Research Institute, Kolkata-700032, India
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Maity Asit
Department of Electrical Engineering and Institute of Electronics, National Tsing-Hua University, Hsinchu, Taiwan, Republic of China
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Lee Joseph
Department of Electrical Engineering and Institute of Electronics, National Tsing-Hua University, Hsinchu, Taiwan, Republic of China
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