Low Contact-Resistance and Shallow Pd/Ge Ohmic Contacts to n-In_Ga_As on InP Substrate Formed by Rapid Thermal Annealing

元データ 1996-12-01 社団法人応用物理学会

概要

Shallow Pd/Ge ohmic contacts to n-type In_<0.53>Ga_<0.47>As with low specific contact resistivity are obtained by the rapid thermal annealing method. For samples annealed at 425℃ for 30 s, the lowest resistivity value is 6.66×10^<-8>Ω・cm^2 and the average value is 1.4×10^<-6>Ω・cm^2. For samples annealed at 425℃ for 60 s, the lowest resistivity value is 2.13×10^<-7>Ω・cm^2 and the average value is 8.6×10^<-7>Ω・cm^2. Secondary ion mass spectrometry (SIMS) analysis shows that the ohmic contact is very shallow. It is found that there is a correlation between gallium and indium SIMS signal bumps and good ohmic contact behavior.

著者

Lee Joseph Department Of Electrical Engineering And Materials Science Center Tsing-hua University
Lee Joseph Department Of Electrical Engineering And Institute Of Electronics National Tsing-hua University
Yeh Yung-hui Department Of Electrical Engineering And Materials Science Center Tsing-hua University
LAI Jiun-Tsuen Department of Electrical Engineering and Materials Science Center, Tsing-Hua University
Lai Jiun-tsuen Department Of Electrical Engineering And Materials Science Center Tsing-hua University

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