Low Contact-Resistance and Shallow Pd/Ge Ohmic Contacts to n-In_<0.53>Ga_<0.47>As on InP Substrate Formed by Rapid Thermal Annealing

概要

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Shallow Pd/Ge ohmic contacts to n-type In_<0.53>Ga_<0.47>As with low specific contact resistivity are obtained by the rapid thermal annealing method. For samples annealed at 425℃ for 30 s, the lowest resistivity value is 6.66×10^<-8>Ω・cm^2 and the average value is 1.4×10^<-6>Ω・cm^2. For samples annealed at 425℃ for 60 s, the lowest resistivity value is 2.13×10^<-7>Ω・cm^2 and the average value is 8.6×10^<-7>Ω・cm^2. Secondary ion mass spectrometry (SIMS) analysis shows that the ohmic contact is very shallow. It is found that there is a correlation between gallium and indium SIMS signal bumps and good ohmic contact behavior.
社団法人応用物理学会の論文
1996-12-01