Negative Differential Resistance in Ferroelectric Lead Zirconate Titanate Thin Films : Influence of Interband Tunneling on Leakage Current
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
-
Maiti Himadri
Electroceramics Laboratory Central Glass And Ceramic Research Institute
-
Lee Joseph
Department Of Electrical Engineering Tsing-hua University
-
Lee Joseph
Department Of Electrical Engineering And Institute Of Electronics National Tsing-hua University
-
MAITY Asit
Department of Electrical Engineering and Institute of Electronics, National Tsing-Hua University
-
SEN Amarnath
Electroceramics Division, Central Glass and Ceramic Research Institute
関連論文
- An Anatomical Study of the Mid-Lateral Pars Relative to the Pedicle Footprint in the Lower Lumbar Spine
- Role of Superconductor-Normal Metal-Superconductor Proximity Junctions in Governing the Intergranular Flux Pinning in Electrophoretically Deposited Y-Ba-Cu-O Films
- Negative Differential Resistance in Ferroelectric Lead Zirconate Titanate Thin Films : Influence of Interband Tunneling on Leakage Current
- Leakage Current Characteristics of Lead-Zirconate-Titanate Thin Film Capacitors for Memory Device Applications
- Thickness Dependence of the Time Dependent Dielectric Breakdown Characteristics of Pb(Zr, Ti)O_3 Thin Film Capacitors for Memory Device Applications
- Low Contact-Resistance and Shallow Pd/Ge Ohmic Contacts to n-In_Ga_As on InP Substrate Formed by Rapid Thermal Annealing
- Negative Differential Resistance in Ferroelectric Lead Zirconate Titanate Thin Films: Influence of Interband Tunneling on Leakage Current