Deep Dry Etching of Quartz Plate Over 100 μm in Depth Employing Ultra-Thick Photoresist (SU-8)

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概要

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• The newly developed backside exposure method enabled us to easily fabricate a vertical/high aspect ratio ultra-thick photoresist (SU-8) pattern on a quartz plate. Deep quartz plate etching masked with SU-8 resist was studied employing an ICP etcher with a C4F8/H2/Ar gas mixture. Two issues took place in the long time etching. One was a corn-like defect generated on the quartz surface and the other was the variation of SU-8 etch rates during the etching process. The former was eliminated by a high bias cleaning process and an Ar plasma preheating process of the chamber wall improved the latter. Accordingly, a vertically etched profile of 100 μm in depth was achieved.

• 2003-06-15

著者

• Fukasawa Takayuki

  School Of Engineering The University Of Tokyo

• HORIIKE Yasuhiro

  School of Engineering, The University of Tokyo

• Fukasawa Takayuki

  School of Engineering, The University of Tokyo, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656, Japan

• Horiike Yasuhiro

  School of Engineering, The University of Tokyo, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656, Japan

関連論文

• Anisotropic Etching of SiO_2 Film and Quartz Plate Employing Anhydrous HF
• Deep Dry Etching of Quartz Plate Over 100 μm in Depth Employing Ultra-Thick Photoresist (SU-8)
• Anisotropic Etching of SiO2 Film and Quartz Plate Employing Anhydrous HF
• Deep Dry Etching of Quartz Plate Over 100 μm in Depth Employing Ultra-Thick Photoresist (SU-8)

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