Anisotropic Etching of SiO2 Film and Quartz Plate Employing Anhydrous HF

スポンサーリンク

概要

• 論文の詳細を見る

• Anisotropic etching of SiO2 film and quartz plate employing anhydrous HF (AHF) was studied. In this etching, neither plasma nor ultraviolet light was used. A SiO2 film below the photoresist, OFPR-800, was selectively etched with AHF gas. However, etch-stop was observed at the depth of 1.5 μm after 15 min. I found that the flow rate of HF gas and a high-pressure process were very effective with regard to this issue. When the flow rate of HF gas was increased to 4300 sccm, etching never stopped over 40 min and 20 μm in depth. The etched depth increased linearly with the increase in etching time. Both ZEP-520-22 and SAL-602-SR2 gave the same results. The etch-stop problem was considered to be mass-balance between the condensed layer below the resist and the gas phase. When AHF etched SiO2 film on Si substrate, notching profile was observed during the over-etching process.

• 2003-06-15

著者

• Fukasawa Takayuki

  School Of Engineering The University Of Tokyo

• HORIIKE Yasuhiro

  School of Engineering, The University of Tokyo

• Fukasawa Takayuki

  School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Horiike Yasuhiro

  School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

関連論文

• Anisotropic Etching of SiO_2 Film and Quartz Plate Employing Anhydrous HF
• Deep Dry Etching of Quartz Plate Over 100 μm in Depth Employing Ultra-Thick Photoresist (SU-8)
• Anisotropic Etching of SiO2 Film and Quartz Plate Employing Anhydrous HF
• Deep Dry Etching of Quartz Plate Over 100 μm in Depth Employing Ultra-Thick Photoresist (SU-8)

スポンサーリンク