Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs
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概要
- 論文の詳細を見る
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and DG thin-body devices are reported for the first time. The thin-body devices exhibit much lower GIDL current than bulk-Si MOSFETs, and the GIDL is found to decrease with decreasing body thickness. These results can be explained by the reduction in transverse electric field at the surface of the drain and the increase in transverse effective mass with decreasing body thickness.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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CHOI Yang-Kyu
Department of Electrical Engineering and Computer Science, University of California
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HA Daewon
Department of Electrical Engineering and Computer Science, University of California
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Bokor Jeffrey
Department Of Electrical Engineering And Computer Science University Of California
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King Tsu-jae
Department Of Electrical Engineering & Computer Sciences University Of California
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King Tsu-Jae
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
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Ha Daewon
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
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Choi Yang-Kyu
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
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