Device Design Considerations for Sub-50nm CMOS
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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King Tsu-jae
Department Of Electrical Engineering And Computer Sciences University Of California
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King Tsu-jae
Department Of Electrical Engineering & Computer Sciences University Of California
関連論文
- Impact of Gate Microstructure on Complementary Metal-Oxide-Semiconductor Transistor Performance
- Device Design Considerations for Sub-50nm CMOS
- Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs