Bonding Structure of the Cross-link in Organosilicate Films Using O2/BTMSM Precursors

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概要

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• This paper describes a chemical bonding structure of organosilicate films. Organosilicate films were deposited on a p-type Si(100) substrate by inductively coupled plasma chemical vapor deposition (ICPCVD) with rf power of 13.56 MHz. The deposition was performed as a function of O2/BTMSM flow rate ratio with a total of 20 sccm. Thereafter, the annealing process was performed at 300°C, 400°C and 500°C in a vacuum. The characteristic analyses of organosilicate films were performed by scanning electron microscopy and X-ray photoelectron spectroscopy (XPS). Organosilicate films in the flow rate ratio of O2/BTMSM = 1.5 formed a bond structure of organometallic carbon, which was confirmed by XPS. The characteristics of the organometallic carbon were attributed to a cross-link structure. The dielectric constant of organosilicate films was reduced due to the increase in the carbon concentration. The relative carbon concentration increased due to the vaporization of the H2O. Therefore, the dielectric constant of annealed films was smaller than that of as-deposited films.

• 2003-04-15

著者

• Ahn Khi-jung

  Faculty Of Telecommunication And Computer Engineering Cheju National University

• Choi Chi

  Department Of Physics Cheju National University

• Kim Kyung

  Faculty Of Electrical And Electronic Engineering Cheju National University

• Ko Sung-teak

  Faculty Of Electrical Amd Electronic Engineering Research Institute Of Advanced Technology Cheju Nat

• Oh Teresa

  Nano Thin Film Materials Lab. Cheju National University

• Lee Kwang-man

  Faculty Of Electrical Amd Electronic Engineering Research Institute Of Advanced Technology Cheju Nat

• Ko Sung-Teak

  Faculty of Electrical and Electronic Engineering, Research Institute of Advanced Technology, Cheju National University, Jeju 690-756, Korea

• Ahn Khi-Jung

  Faculty of Telecomunication and Computer Engineering, Cheju National University, Jeju 690-756, Korea

• Kim Kyung

  Faculty of Electrical and Electronic Engineering, Research Institute of Advanced Technology, Cheju National University, Jeju 690-756, Korea

• Lee Kwang-Man

  Faculty of Electrical and Electronic Engineering, Research Institute of Advanced Technology, Cheju National University, Jeju 690-756, Korea

• Oh Teresa

  Nano Thin Film Materials Lab., Cheju National University, Jeju 690-756, Korea

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