Preparation and Ferroelectric Properties of Lanthanum Modified Sr0.8Bi2.2Ta2O9 Thin Films

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概要

• 論文の詳細を見る

• La modified Sr0.8Bi2.2Ta2O9 (SLBT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. All the films were annealed at 800°C using a rapid thermal annealing furnace. X-ray diffraction analysis indicated that single-phase layered perovskite SLBT ferroelectric thin films can be obtained and no secondary phase was found. The crystallization and hysteresis behavior of SLBT films showed a dependence on the La content. An increase of $P_{\text{r}}$ and decrease of $E_{\text{c}}$ with increasing La concentration were observed. The fatigue properties were found to be improved when more La was added to SLBT films. The results were discussed with respect to the effects of La3+ and Bi3+ substitution at perovskite A-site.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-12-15

著者

• Tang Ting-ao

  Department Of Microelectronics Fudan University

• Hu Guangda

  Department Of Microelectronics Asic & System State Kex Lab Fudan University

• Hu Guangda

  Department of Microelectronics, Fudan University, Shanghai 200433, China

• Zhong Yu

  Department of Microelectronics, Fudan University, Shanghai 200433, China

• Tang Ting-Ao

  Department of Microelectronics, Fudan University, Shanghai 200433, China

関連論文

• Preparation of (100)-Oriented LaNiO_3 Oxide Electrodes for SrBi_2Ta_2O_9-Based Ferroelectric Capacitors
• Tip Effects of Piezoelectric-Mode Atomic Force Microscope for Local Piezoelectric Measurements of an SrBi_2Ta_2O_9 Thin Film
• Preparation and Ferroelectric Properties of Lanthanum Modified Sr0.8Bi2.2Ta2O9 Thin Films

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