Preparation of (100)-Oriented LaNiO_3 Oxide Electrodes for SrBi_2Ta_2O_9-Based Ferroelectric Capacitors

概要

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LaNiO_3 thin films were prepared on SiO_2/Si and Pt/Ti/SiO_2ISi substrates using a modified sol-gel technique. To decrease the annealing temperature, LaNiO_3 thin films were annealed layer-by-layer in a rapid thermal annealing furnace. The effects of preheating temperature and annealing temperature on the crystallographic orientation and resistivity of LaNiO_3 thin films were studied respectively. (100)-oriented LaNiO_3 thin films can be formed on SiO_2/Si and Pt/Ti/SiO_2/Si substrates at an annealing temperature of 600℃. The typical room-temperature resistivity of the (100)-oriented LaNiO_3 thin films deposited on SiO_2/Si substrates is about 4.7 × l0^<-4> Ωcm. To verify the function of LaNiO_3 thin films as the bottom electrodes of ferroelectric capacitors, SrBi_2Ta_2O_9 thin films were fabricated on LaNiO_3-coated PtITi/SiO_2/Si substrates by the metal organic decomposition technique. No evident fatigue was observed for an SrBi_2Ta_2O_5 thin film annealed at 600℃, although its remanent polarization is not as large as that for the SrBi_2Ta_2O_9 thin films deposited directly on Pt/Ti/SiO_2/Si substrates.
社団法人応用物理学会の論文
2002-11-30