The Effect of Oxygen Partial Pressure on Marangoni-Flow-Induced Dopant Striations in Floating-Zone Silicon Crystals

概要

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A silicon crystal was grown after the floating-zone (FZ) method under oxygen partial pressures ($P_{\text{o$_{2}$}}^{\text{in}}$) of $2.0\times 10^{-8}$ MPa and $5.8\times 10^{-6}$ MPa, which were measured at the entrance of a furnace. It was found that dopant striations showed a single-peak spectrum at 0.19 Hz in this crystal, and a crystal grown at $P_{\text{o$_{2}$}}^{\text{in}}$ of $2.0\times 10^{-8}$ MPa showed multiple frequencies. This result is explained by a decrease in the Marangoni number with increasing oxygen partial pressure. It has thus been concluded that Marangoni flow in FZ silicon crystal growth can be controlled by introducing oxygen gas, independently of the temperature field control in the vicinity of the crystal/melt interface.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-10-15