The Effect of Oxygen Partial Pressure on Marangoni-Flow-Induced Dopant Striations in Floating-Zone Silicon Crystals

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• AZAMI Takeshi

  Fundamental Research Laboratories, NEC Corporation

• Azami Takeshi

  Fundamental Research Laboratories Nec Corporation

• SUMIJI Masanobu

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• HIBIYA Taketoshi

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

関連論文

• The effect of oxygen on the Marangoni flow of molten silicon
• The Effect of Oxygen Partial Pressure on Marangoni-Flow-Induced Dopant Striations in Floating-Zone Silicon Crystals
• Optical Measurement of Resonant Oscillation and Marangoni Convection-Induced Oscillation in a Molten Silicon Surface
• The Effect of Oxygen Partial Pressure on Marangoni-Flow-Induced Dopant Striations in Floating-Zone Silicon Crystals

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