RF-Magnetron Sputtered Conductive Perovskite BaPbO3 Films

概要

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The crystallinity, chemical bonding, and electrical properties of BaPbO3 (BPO) thin films prepared by rf-magnetron sputtering on SiO2/Si substrates were investigated. The working pressure and the Ar/O2 ratio during sputtering are two of the most important factors that influence the characteristics of the prepared BPO films. Both increasing working pressure and increasing Ar/O2 ratio enhanced the crystallization of the perovskite BPO phase and yielded films with low resistivity. Sputtering in an environment with a working pressure of 80 mTorr and $\text{Ar/O$_{2}$}$ = 90/10 at 350°C gave deposited BPO films with a low resistivity of $0.9 \times 10^{-3}$ $\Omega$cm, and a high carrier concentration of $8.3 \times 10^{20}$ electrons/cm3, which values were almost equal to those of the bulk BaPbO3. X-ray photoelectron spectroscopy (XPS) revealed that Pb4+ ions were formed in the BPO films as the working pressure and the Ar/O2 ratio were increased, enhancing the crystallization of the perovskite BPO phase to yield films of lower resistivity.
2003-01-15