Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge
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概要
- 論文の詳細を見る
Crystalline silicon nitride (SiNx) thin films on Si(111) and amorphous SiNx films on Si(001) have been obtained after NH3 or NO exposure at $T\approx 1175$ K@. The crystallinity of the film on Si(111) has been verified with high-resolution cross-sectional transmission electron microscopy (TEM) and scanning tunneling microscopy. The thickness of the SiNx film is 3–6 atomic layers. When compared with the known phases of Si3N4, our SiNx film is relatively close to $\beta$-Si3N4, but it could be a new phase of silicon nitride. Si or Ge forms 3D islands initially when deposited on both crystalline and amorphous SiNx films, and most of the islands are not aligned with the Si substrates. However, on SiNx/Si(111), the islands aligned with the Si substrate grow faster than other islands, so that the overlayer gradually grows into a (111)-oriented columnar film. On SiNx/Si(001), the overlayer films remain polycrystalline in later stages of growth.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-30
著者
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Cue Nelson
Department Of Physics Hong Kong University Of Science And Technology
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Tang Jing-chang
Zhejiang University
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Wang Xun
Surface Physics Laboratory Fudan University
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Wang Yuqi
Department Of Physics Hong Kong University Of Science And Technology
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Hu Yanfang
Department Of Physics Hong Kong University Of Science And Technology
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Li Zongquan
Department Of Physics Hong Kong University Of Science And Technology
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Wang Xue-sen
Department Of Physics National University Of Singapore
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Yang Jianshu
Department Of Physics Hong Kong University Of Science And Technology
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Zhai Guangjie
Department Of Physics Hong Kong University Of Science And Technology
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Fung Kwok-kwong
Department Of Physics Hong Kong University Of Science And Technology
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Wang Lei
Department Of Cardio-thoracic Surgery Xinhua Hospital School Of Medicine Shanghai Jiaotong Universit
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Tang Jing-Chang
Zhejiang University, Hangzhou, Zhejiang 310027, China
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Cue Nelson
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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Wang Xue-Sen
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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Li Zongquan
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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Yang Jianshu
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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Wang Xun
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
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Wang Lei
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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