Strain-Mediated Uniform Islands in Stacked Ge/Si(001) Layers

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概要

• 論文の詳細を見る

• The role of a Si spacer layer in improving the uniformity of multilayer coherent Ge quantum dots on Si(001) is investigated using scanning tunneling microscopy. Deposition of the Si spacer layer at room temperature and subsequent annealing lead to the formation of (001)-oriented Si mesas on top of Ge islands (pyramids and huts). One mesa forms when the island beneath is pyramid-like, whereas a few mesas form when the island beneath is an elongated hut. The mesas are found to be preferential nucleation sites for the Ge islands in consecutive stacked layers. The vertical-pyramid-replicating and hut-breaking processes play key roles in the improvement of island size, shape and spacing uniformity.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-15

著者

• Xue Qikun

  State Key Laboratory For Surface Physics Institute Of Physics Chinese Academy Of Sciences

• Xu M

  National Inst. Materials Sci. Tsukuba Jpn

• WANG Xue-Sen

  Department of Physics, Hong Kong University of Science and Technology

• Xu Maojie

  Department of Physics, National University of Singapore, Lower Kent Ridge Road, 119260, Singapore

• Jeyanthinath Mayandi

  Department of Physics, National University of Singapore, Lower Kent Ridge Road, 119260, Singapore

• Jia Jinfeng

  State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing

• Xu Maojie

  Department Of Physics National University Of Singapore

• Jia Jinfeng

  State Key Laboratory For Surface Physics Institute Of Physics Chinese Academy Of Sciences

• Wang Xue-sen

  Department Of Physics National University Of Singapore

• Jeyanthinath Mayandi

  Department Of Physics National University Of Singapore

関連論文

• Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge
• Strain-Mediated Uniform Islands in Stacked Ge/Si(001) Layers
• Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge

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