Influences of Residual Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology

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概要

• 論文の詳細を見る

• Influences of the chemical vapor deposition (CVD)-TiN gate process on gate oxide integrity have been studied. The gate leakage characteristic and reliability of the gate oxide were drastically degraded by 1000°C annealing for thick oxide as compared to for thin oxide. By X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS) analyses, the oxide degradation is confirmed to be due to the formation of a weak spot induced by out-diffusion of residual Cl from the TiN gate electrode into the gate oxide. Out-diffused Cl reacts with defects in the oxide during the high-temperature anneal and forms trap sites. The weak spot which acts as a leakage path appears to be the local spot which has a larger amount of Cl-related trap sites. Controlling of impurities in the CVD metal gate is a key for realizing future multiple-thickness gate oxide technology.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-30

著者

• Moriwaki Masaru

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Yamada Takayuki

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.

• Moriwaki Masaru

  ULSI Process Technology Development Center, Matsushita Electronics Corporation, 19 Nishikujyo-Kasugacho, Minami-ku, Kyoto 601-8413, Japan

関連論文

• Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
• Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
• Impacts of Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology
• Influences of Residual Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology

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