Impacts of Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Moriwaki Masaru
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Yamada Takayuki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
関連論文
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Impacts of Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology
- Influences of Residual Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology