Influence of Vacuum-Annealing Process on the Secondary Electron Emission Coefficient ($\gamma$) from a MgO Protective Layer

概要

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The secondary electron emission coefficient ($\gamma$) of vacuum-annealed MgO films has been investigated using a $\gamma$-focused ion beam ($\gamma$-FIB) system. The vacuum-annealed MgO films have been found to have higher $\gamma$ values from 0.05 to 0.12 than those from 0.03 to 0.06 for as-deposited MgO films for operating Ne$^+$ ions whose acceleration voltages ranged from 50 V to 200 V@. It is shown that the $\gamma$ for the as-deposited MgO protective layer is significantly decreased by the influence of holding in air since the hydroxyl OH groups are absorbed onto the MgO surface from the atmospheric air. It is also observed that the secondary electron emission coefficient $\gamma$ for the vacuum-annealed MgO protective layer is less influenced by holding in air than that for the as-deposited MgO protective layer. Based on these findings, it is concluded that the vacuum-annealed MgO protective layer plays an important role in lowering the firing voltage in alternating current-plasma display panel (AC-PDP) compared with the as-deposited MgO protective layer or the as-deposited MgO protective layer held in air.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2001-03-15