A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology
スポンサーリンク
概要
- 論文の詳細を見る
Highly-efficient RF thin-film silicon-on-insulator (SOI) power metal-oxide-semiconductor field-effect-transistors (MOSFETs) were fabricated by a 0.4-$\mu$m complementary metal-oxide-semiconductor field-effect-transistors (CMOSFET)/SOI process. Their breakdown voltages were more than 10 V when the gate and drain offset lengths were 0.4 $\mu$m, and the cutoff frequency and maximum oscillation frequency were 20.4 and 20.7 GHz, respectively. When the drain supply voltage was 3.0 V, its power-added efficiency and saturation output power were 66% and 24 dBm at 2 GHz and were 20.3 dBm and 52% at 5.8 GHz. These values were higher than the corresponding values for a thin-film SOI power MOSFET fabricated using state-of-the-art 0.5-$\mu$m CMOS/SOI technology. These results indicate that the 0.4-$\mu$m-rule thin-film SOI technology is applicable at not only 2-GHz-band but also 5 GHz-band.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-15
著者
-
MATSUMOTO Satoshi
NTT Telecommunications Energy Laboratories
-
SAKAI Tatsuo
NTT Telecommunications Energy Laboratories
-
Hiraoka Yasushi
Ntt Telecommunication Energy Laboratories
-
Hiraoka Yasushi
NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Matsumoto Satoshi
NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Matsumoto Satoshi
NTT Telecommunication Energy Laboratories, 3-1 Morinosato Wakamiya, Atsgi-shi, Kanagawa 243-0198, Japan
関連論文
- A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology
- Investigation on the Fully-and Partially-Depleted Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect-Transistors for High-Frequency Applications
- A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology
- Impact of Silicon-on-Insulator Substrate Parameters on the Radio Frequency Performance of Quasi-Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field Effect Transistors