Matsumoto Satoshi | NTT Telecommunication Energy Laboratories, 3-1 Morinosato Wakamiya, Atsgi-shi, Kanagawa 243-0198, Japan

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概要

• Matsumoto Satoshiの詳細を見る
• 同名の論文著者
• NTT Telecommunication Energy Laboratories, 3-1 Morinosato Wakamiya, Atsgi-shi, Kanagawa 243-0198, Japanの論文著者

関連著者

• Matsumoto Satoshi

  NTT Telecommunication Energy Laboratories, 3-1 Morinosato Wakamiya, Atsgi-shi, Kanagawa 243-0198, Japan

• MATSUMOTO Satoshi

  NTT Telecommunications Energy Laboratories

• SAKAI Tatsuo

  NTT Telecommunications Energy Laboratories

• Hiraoka Yasushi

  Ntt Telecommunication Energy Laboratories

• Sasaki Tatsuo

  Ntt Telecommunications Energy Laboratories

• Matsumoto S

  Faculty Of Science And Technology Keio University

• Sakai T

  Dainippon Screen Manufacturing Co. Ltd. Kyoto Jpn

• YACHI Toshiaki

  NTT Telecommunications Energy Laboratories

• Matsumoto S

  Ntt Telecommunications Energy Laboratories

• Yachi Toshiaki

  Tokyo University Of Science

• Yachi Toshiaki

  Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan

• Hiraoka Yasushi

  NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Hiraoka Yasushi

  NTT Telecommunication Energy Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180-8585, Japan

• Matsumoto Satoshi

  NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan

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著作論文

• Investigation on the Fully-and Partially-Depleted Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect-Transistors for High-Frequency Applications
• A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology
• Impact of Silicon-on-Insulator Substrate Parameters on the Radio Frequency Performance of Quasi-Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field Effect Transistors

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