Hiraoka Yasushi | Ntt Telecommunication Energy Laboratories
スポンサーリンク
概要
関連著者
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Hiraoka Yasushi
Ntt Telecommunication Energy Laboratories
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Matsumoto Satoshi
NTT Telecommunication Energy Laboratories, 3-1 Morinosato Wakamiya, Atsgi-shi, Kanagawa 243-0198, Japan
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MATSUMOTO Satoshi
NTT Telecommunications Energy Laboratories
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SAKAI Tatsuo
NTT Telecommunications Energy Laboratories
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Yachi Toshiaki
Tokyo University Of Science
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Yachi Toshiaki
Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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Hiraoka Yasushi
NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Hiraoka Yasushi
NTT Telecommunication Energy Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180-8585, Japan
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Matsumoto Satoshi
NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan
著作論文
- A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology
- Impact of Silicon-on-Insulator Substrate Parameters on the Radio Frequency Performance of Quasi-Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field Effect Transistors