Impact of Silicon-on-Insulator Substrate Parameters on the Radio Frequency Performance of Quasi-Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field Effect Transistors

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概要

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• We have investigated the impact of silicon-on-insulator (SOI) substrate parameters on the radio-frequency performance of quasi-SOI power metal–oxide–semiconductor field effect transistors (MOSFETs) to optimize the device structure. We found that increasing the top silicon layer thickness of the quasi-SOI power MOSFET increased the breakdown voltage and decreased the on-resistance. Increasing the thickness of the top Si layer also increased the cutoff frequency, the maximum oscillation frequency, and the power-added efficiency. The power-added efficiency of a quasi-SOI power MOSFET with a thick buried oxide layer was also higher than that of one with a thinner layer because the thicker buried oxide resulted in lower source-to-drain capacitance, which enables better second-harmonic tuning.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• Yachi Toshiaki

  Tokyo University Of Science

• Hiraoka Yasushi

  Ntt Telecommunication Energy Laboratories

• Yachi Toshiaki

  Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan

• Hiraoka Yasushi

  NTT Telecommunication Energy Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180-8585, Japan

• Matsumoto Satoshi

  NTT Telecommunication Energy Laboratories, 3-1 Morinosato Wakamiya, Atsgi-shi, Kanagawa 243-0198, Japan

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• A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology
• Impact of Silicon-on-Insulator Substrate Parameters on the Radio Frequency Performance of Quasi-Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field Effect Transistors

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