Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change
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概要
- 論文の詳細を見る
The five-layer asymmetric coupled quantum well (FACQW) is a new potential-tailored quantum well (QW) for ultrafast and low-voltage optical modulators and switches. First, the influence of one monolayer (ML) thickness variation of a single layer in the GaAs/AlGaAs FACQW on the electrorefractive index change $\Delta n$ is theoretically studied. The thickness variation of two thicker GaAs layers has a considerable influence on $\Delta n$ of the FACQW, while the thickness variation of thin AlAs and AlGaAs barrier layers has a smaller influence on $\Delta n$. The ratio of the thicknesses of the two GaAs well layers significantly affects the $\Delta n$ characteristics of the FACQW@. The change $\Delta n$ does not vary appreciably as long as the ratio is kept constant. Second, the influence of the statistical fluctuation of the layer thickness by 1 ML in all of the layers on the $\Delta n$ characteristics of the FACQW is also discussed. Even when $\Delta n$ decreases with the increase of the occurrence probability of a layer being thicker or thinner by 1 ML, the FACQW still has a much larger $\Delta n$ than conventional rectangular quantum wells do.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-15
著者
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Arakawa Taro
Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University
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TADA Kunio
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National Universit
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KAZUMA Kensuke
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National Universit
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NOH Joo-Hyong
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National Universit
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Kurosawa Naoki
Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University
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Kurosawa Naoki
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Arakawa Taro
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Tada Kunio
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Kazuma Kensuke
Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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