Compensation Model for η-type GaN : Semiconductors
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概要
- 論文の詳細を見る
The defect structure for unintentionally doped and deliberately Se-doped, η-type GaN was investigated. For impurity doping, Se was incorporated into GaN films during vapor phase epitaxial growth. Both nominally undoped and Se-doped, η-type GaN films were highly compensated as determined by the Hall effect measurements and photoluminescence spectroscopy. It was also found that the compensation by acceptors increases with increasing. Se doping concentration. Based upon these experiments and the theoretical calculations, a defect compensation model for η-type GaN was developed.
- 社団法人応用物理学会の論文
- 2001-11-15
著者
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Park Won
Department Of Bioenergy Science And Technology Bioenergy Research Institute College Of Agriculture A
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Yi Gyu-chul
Department Of Materials Science And Engineering Pohang University Of Science And Techno1ogy
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- Compensation Model for η-type GaN : Semiconductors